Journal: Chemistry of Materials
Article Title: Transport Properties of Doped Wide Band Gap Layered Oxychalcogenide Semiconductors Sr 2 GaO 3 Cu Ch , Sr 2 ScO 3 Cu Ch , and Sr 2 InO 3 Cu Ch ( Ch = S or Se)
doi: 10.1021/acs.chemmater.4c02760
Figure Lengend Snippet: Summary of the Relative Stability of the Two Possible Structure Types A 3 M 2 O 5 Cu 2 Ch 2 and A 2 M O 3 Cu Ch Stating if either or both Can Be Formed from Appropriate Ratio of Precursors, for A = Sr or Ba, M = Ga, Sc or In, and Ch = S or Se
Article Snippet: The precursors SrO (Fisher Scientific, 99.5%), Ga 2 O 3 (Fisher Scientific, 99.99%), Sc 2 O 3 (Sigma-Aldrich, 99.995%), In 2 O 3 (Alfa Aesar, 99.998%), SrS (Fisher Scientific, 99.9%), Cu 2 Se (Alfa Aesar 99.5%), and Cu 2 S (Alfa Aesar 99.5%) were purchased and used as provided.
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